Channel optical waveguides formed by deuterium passivation in GaAs and InP
Identifieur interne : 001A74 ( France/Analysis ); précédent : 001A73; suivant : 001A75Channel optical waveguides formed by deuterium passivation in GaAs and InP
Auteurs : RBID : Pascal:97-0580298Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
Channel optical waveguides have been formed on both GaAs and InP substrates utilizing deuterium passivation of the surface to provide planar confinement and etching to provide lateral confinement. Design criteria were established for obtaining single mode channel waveguides for the present case of small index changes and thick surface layers associated with deuterium passivation. Planar and channel waveguide operations were demonstrated and channel waveguide propagation losses have been measured. For GaAs channel waveguides, optical loss was measured as a function of channel waveguide width, ranging from 3 to 9 μm, with a minimum loss found for a width of 6.0 μm. Channel waveguide losses as low as 12.7 dB/cm for GaAs and 6.0 dB/cm for InP have been measured at λ=1.3 μm. For InP this loss value is close to the limiting value imposed by free carrier absorption in the semiconductor region below the passivated region. Since the waveguide loss due to free carriers can be reduced by increasing waveguide confinement, we anticipate that lower loss optical channel waveguides could be formed by this technique. © 1997 American Institute of Physics.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 018061
- to stream Main, to step Repository: 017977
- to stream France, to step Extraction: 001A74
Links to Exploration step
Pascal:97-0580298Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Channel optical waveguides formed by deuterium passivation in GaAs and InP</title><author><name sortKey="Kumar, Mukesh" uniqKey="Kumar M">Mukesh Kumar</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, Ohio 45221-0030</s1><sZ>1 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Ohio</region></placeName><wicri:cityArea>Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati</wicri:cityArea></affiliation></author><author><name sortKey="Boyd, Joseph T" uniqKey="Boyd J">Joseph T. Boyd</name></author><author><name sortKey="Jackson, Howard E" uniqKey="Jackson H">Howard E. Jackson</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Department of Physics, University of Cincinnati, Cincinnati, Ohio 45221-0011</s1><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Ohio</region></placeName><wicri:cityArea>Department of Physics, University of Cincinnati, Cincinnati</wicri:cityArea></affiliation></author><author><name sortKey="Zavada, John M" uniqKey="Zavada J">John M. Zavada</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>U.S. Army Research Office, Research Triangle Park, North Carolina 27709-2211</s1><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Caroline du Nord</region></placeName><wicri:cityArea>U.S. Army Research Office, Research Triangle Park</wicri:cityArea></affiliation></author><author><name sortKey="Jenkinson, Howard A" uniqKey="Jenkinson H">Howard A. Jenkinson</name><affiliation wicri:level="2"><inist:fA14 i1="04"><s1>U. S. Army Armament Research, Development & Engineering Center, Picatinny Arsenal, New Jersey 07806</s1><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">New Jersey</region></placeName><wicri:cityArea>U. S. Army Armament Research, Development & Engineering Center, Picatinny Arsenal</wicri:cityArea></affiliation></author><author><name sortKey="Wilson, Robert G" uniqKey="Wilson R">Robert G. Wilson</name><affiliation wicri:level="2"><inist:fA14 i1="05"><s1>Hughes Research Laboratories, Malibu, California 90265</s1><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Hughes Research Laboratories, Malibu</wicri:cityArea></affiliation></author><author><name sortKey="Theys, B" uniqKey="Theys B">B. Theys</name><affiliation wicri:level="3"><inist:fA14 i1="06"><s1>Laboratoire de Physique des Solides, CNRS-Meudon, Meudon, 92195 France</s1><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">France</country><wicri:regionArea>Laboratoire de Physique des Solides, CNRS-Meudon, Meudon</wicri:regionArea><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">France</settlement></placeName></affiliation></author><author><name sortKey="Chevallier, J" uniqKey="Chevallier J">J. Chevallier</name></author></titleStmt><publicationStmt><idno type="inist">97-0580298</idno><date when="1997-10-01">1997-10-01</date><idno type="stanalyst">PASCAL 97-0580298 AIP</idno><idno type="RBID">Pascal:97-0580298</idno><idno type="wicri:Area/Main/Corpus">018061</idno><idno type="wicri:Area/Main/Repository">017977</idno><idno type="wicri:Area/France/Extraction">001A74</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Carrier density</term><term>Deuterium</term><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Light absorption</term><term>Optical design techniques</term><term>Optical losses</term><term>Optical planar waveguides</term><term>Passivation</term><term>Refractive index</term><term>Sputter etching</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>4279G</term><term>8105E</term><term>8165R</term><term>5275R</term><term>4215E</term><term>7820C</term><term>Etude expérimentale</term><term>Gallium arséniure</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Deutérium</term><term>Guide onde optique plan</term><term>Passivation</term><term>Gravure pulvérisation</term><term>Technique conception optique</term><term>Indice réfraction</term><term>Perte optique</term><term>Absorption lumière</term><term>Densité porteur charge</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Channel optical waveguides have been formed on both GaAs and InP substrates utilizing deuterium passivation of the surface to provide planar confinement and etching to provide lateral confinement. Design criteria were established for obtaining single mode channel waveguides for the present case of small index changes and thick surface layers associated with deuterium passivation. Planar and channel waveguide operations were demonstrated and channel waveguide propagation losses have been measured. For GaAs channel waveguides, optical loss was measured as a function of channel waveguide width, ranging from 3 to 9 μm, with a minimum loss found for a width of 6.0 μm. Channel waveguide losses as low as 12.7 dB/cm for GaAs and 6.0 dB/cm for InP have been measured at λ=1.3 μm. For InP this loss value is close to the limiting value imposed by free carrier absorption in the semiconductor region below the passivated region. Since the waveguide loss due to free carriers can be reduced by increasing waveguide confinement, we anticipate that lower loss optical channel waveguides could be formed by this technique. © 1997 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>82</s2></fA05><fA06><s2>7</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Channel optical waveguides formed by deuterium passivation in GaAs and InP</s1></fA08><fA11 i1="01" i2="1"><s1>KUMAR (Mukesh)</s1></fA11><fA11 i1="02" i2="1"><s1>BOYD (Joseph T.)</s1></fA11><fA11 i1="03" i2="1"><s1>JACKSON (Howard E.)</s1></fA11><fA11 i1="04" i2="1"><s1>ZAVADA (John M.)</s1></fA11><fA11 i1="05" i2="1"><s1>JENKINSON (Howard A.)</s1></fA11><fA11 i1="06" i2="1"><s1>WILSON (Robert G.)</s1></fA11><fA11 i1="07" i2="1"><s1>THEYS (B.)</s1></fA11><fA11 i1="08" i2="1"><s1>CHEVALLIER (J.)</s1></fA11><fA14 i1="01"><s1>Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, Ohio 45221-0030</s1><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Department of Physics, University of Cincinnati, Cincinnati, Ohio 45221-0011</s1><sZ>3 aut.</sZ></fA14><fA14 i1="03"><s1>U.S. Army Research Office, Research Triangle Park, North Carolina 27709-2211</s1><sZ>4 aut.</sZ></fA14><fA14 i1="04"><s1>U. S. Army Armament Research, Development & Engineering Center, Picatinny Arsenal, New Jersey 07806</s1><sZ>5 aut.</sZ></fA14><fA14 i1="05"><s1>Hughes Research Laboratories, Malibu, California 90265</s1><sZ>6 aut.</sZ></fA14><fA14 i1="06"><s1>Laboratoire de Physique des Solides, CNRS-Meudon, Meudon, 92195 France</s1><sZ>7 aut.</sZ></fA14><fA20><s1>3205-3213</s1></fA20><fA21><s1>1997-10-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 1997 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>97-0580298</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Channel optical waveguides have been formed on both GaAs and InP substrates utilizing deuterium passivation of the surface to provide planar confinement and etching to provide lateral confinement. Design criteria were established for obtaining single mode channel waveguides for the present case of small index changes and thick surface layers associated with deuterium passivation. Planar and channel waveguide operations were demonstrated and channel waveguide propagation losses have been measured. For GaAs channel waveguides, optical loss was measured as a function of channel waveguide width, ranging from 3 to 9 μm, with a minimum loss found for a width of 6.0 μm. Channel waveguide losses as low as 12.7 dB/cm for GaAs and 6.0 dB/cm for InP have been measured at λ=1.3 μm. For InP this loss value is close to the limiting value imposed by free carrier absorption in the semiconductor region below the passivated region. Since the waveguide loss due to free carriers can be reduced by increasing waveguide confinement, we anticipate that lower loss optical channel waveguides could be formed by this technique. © 1997 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="X"><s0>001D03G02C1</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A20</s0></fC02><fC02 i1="03" i2="3"><s0>001B80A65</s0></fC02><fC02 i1="04" i2="3"><s0>001B50B75R</s0></fC02><fC02 i1="05" i2="3"><s0>001B40B15E</s0></fC02><fC02 i1="06" i2="3"><s0>001B70H20C</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>4279G</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>8105E</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>8165R</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>5275R</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>4215E</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>7820C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Deutérium</s0><s2>NC</s2></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Deuterium</s0><s2>NC</s2></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Guide onde optique plan</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Optical planar waveguides</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Passivation</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Passivation</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Gravure pulvérisation</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Sputter etching</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Technique conception optique</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Optical design techniques</s0></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Indice réfraction</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Refractive index</s0></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Perte optique</s0></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Optical losses</s0></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Absorption lumière</s0></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Light absorption</s0></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Densité porteur charge</s0></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Carrier density</s0></fC03><fN21><s1>356</s1></fN21><fN47 i1="01" i2="1"><s0>9718M000464</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/France/Analysis
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 001A74 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/France/Analysis/biblio.hfd -nk 001A74 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= France
|étape= Analysis
|type= RBID
|clé= Pascal:97-0580298
|texte= Channel optical waveguides formed by deuterium passivation in GaAs and InP
}}
| This area was generated with Dilib version V0.5.77. |  |